P-channel MOSFETs boost circuit efficiency

Zetex has released its first 30V P-channel enhancement-mode MOSFETs.

Zetex has released its first 30V P-channel enhancement-mode mosfets.

The unique recessed gate architecture of these advanced trench mosfets combines low on-resistance with fast switching to ensure high efficiency operation and higher current handling.

Five low-voltage P-channel products are available, with a variety of surface mount options.

Single device components are offered in a choice of SOT23 and SOT23-6 packages and dual device components in the larger SO8 format.

The new parts complement existing Zetex N-channel types.

For a gate drive of 10V, the SOT23-6 packaged ZXMP3A17E6 presents a maximum on-resistance of just 70mohm for a continuous drain current of 4A and a pulsed drain current of 14.4A.

The mosfet's low total gate charge 15.8nC for the same gate drive makes the part suitable for high-frequency tasks.

As a low-loss high-speed switching solution, the P-channel mosfet series targets DC/DC convertor, motor control and disconnect applications and a broad range of power management functions.

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