Product category:
Discrete Power Devices
News Release from: Zetex | Subject: ZXTD4591AM832
Edited by the Electronicstalk Editorial
Team on 14 August 2003
Dual MOSFETs shoehorn into tiny packages
A new range of complementary dual bipolar and MOSFET parts in 3 x 2 x 1mm micro leaded packages are claimed to match the performance levels of devices in much larger packages.
A new range of complementary dual bipolar and mosfet parts in 3 x 2 x 1mm micro leaded packages (MLPs) are claimed to match the performance levels of devices in much larger packages Used in push-pull circuit topologies, the transistor pairings create low-cost, high-performance power mosfet gate drivers
This article was originally published on Electronicstalk on 24 Jul 2008 at 8.00am (UK)
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Providing the requisite high pulse current and fast switching, the ZXTD4591AM832 offers a 40V rated NPN and PNP combination supporting a continuous collector current of 2.5A and a maximum saturation voltage of 500mV.
Specified up to 2A, the gain of the two transistors is also high, respectively 200 and 160 at 1A collector current.
The mosfet equivalent ZXMC3AM832 package, houses complementary 30V trench mosfets that combine low on-resistance with enhanced rise and fall times suiting high efficiency power mosfet driving.
Maximum on-resistance values for N- and P-channel devices are just 0.12 and 0.21ohm with drain current capabilities of 3.7 and 2.7A.
The exposed heatsink of the leadless dual die MLP832 package used by these transistors also offers significant thermal resistance advantages over SOT23 packaged parts.
Savings in PCB area, offboard height and device placement costs will result from the combination of two high performance discrete devices in a single low-profile package.
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