Product category:
Discrete Power Devices
News Release from: Zetex | Subject: ZXMN2A14F and ZXMN3A14F
Edited by the Electronicstalk Editorial
Team on 05 September 2003
MOSFETs boost power dissipation by 60%
Two new enhancement-mode trench MOSFETs feature half the on-resistance and twice the drain current of previous SOT23-packaged devices.
Halving the on-resistance and doubling the drain current of previous SOT23-packaged mosfets, the latest 20 and 30V N-channel transistors from Zetex take power dissipation performance at an ambient temperature of 25C from 625mW up to 1W Presented in the Zetex SOT23 package, the ZXMN2A14F and ZXMN3A14F enhancement-mode trench mosfets benefit from a 37% reduction in junction to ambient thermal resistance compared with SOT23 predecessors, from 200 to 125C/W
This article was originally published on Electronicstalk on 6 Feb 2002 at 8.00am (UK)
Related stories
MOSFETs to give that home theatre sound
Zetex has launched a series of four N- and P-channel MOSFETs providing all the performance demanded by Class D audio systems.
The 20V N-channel mosfet delivers a continuous drain current of 4.1A for an on-resistance of 60mohm and a gate drive of 4.5V.
For the 30V device, drain current is specified as 3.9A for an on-resistance of 65mohm and gate drive of 10V.
Combining the advantage of low on-resistance with the added benefit of fast switching, the two mosfets suit high-efficiency low-voltage power-management tasks, including DC/DC convertors, disconnect switches and motor controllers.
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