Product category:
Discrete Power Devices
News Release from: Zetex | Subject: ZXTC2045E6
Edited by the Electronicstalk Editorial
Team on 14 February 2006
Bipolars pair up for driving duties
Combining complementary NPN and PNP transistors in the SOT236 package, the ZXTC2045E6 produces the drive needed to switch high power MOSFETs and IGBTs in power supply designs.
Combining complementary NPN and PNP transistors in the SOT236 package, the ZXTC2045E6 from Zetex Semiconductors produces the drive requirement needed to switch high power MOSFETs and IGBTs in power supply designs Supporting a peak pulsed current of up to 5A, the bipolars ensure faster charge and discharge of gate capacitances and so help improve efficiency
This article was originally published on Electronicstalk on 24 Jul 2008 at 8.00am (UK)
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Separate emitter pins for the NPN and PNP devices also provide designers with the opportunity to select independent resistor values in order to control gate charge and discharge cycles more accurately.
Occupying a footprint of just 9mm2 and an off-board height of 1.3mm, the dual transistor SOT236 package will help reduce board size and increase power density.
Rated for 40V operation, and with a typical gain of 300, the ZXTC2045E6 will suit a wide range of gate driver circuits.
The price of the ZXTC2045E6 is US $0.153 in 10,000-unit quantities.
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