Power driver suits high-temperature operation
Cissoid has released Prometheus-II, a fast, high-temperature power-transistor-driver reference design that is suitable for operation from -55 to 225C.
Prometheus-II provides a solution to drive Silicon-Carbide (SiC), GaN and other power devices such as MOSFETs, IGBT, JFET and BJT in demanding applications requiring reliable and continuous operation up to 225C.
Prometheus-II is the latest product in Cissoid's range of Titan power drivers.
It is a reference design based on the high-temperature half-bridge driver, CHT-Hyperion.
All active components are high-temperature-proven products from Cissoid, ensuring reliable operation at extreme temperatures.
Compared to the earlier version, Prometheus-II brings greater sink/source current capability, shorter delays and faster rise and fall times.
The current capability depends on the MOSFETs used in the output push-pull stage.
As an example, the CHT-NMOS4005 is able to sink up to 6A at 25C in switching mode.
For applications requiring higher current capabilities, the CHT-NMOS4010 (for 12A at 25C) or CHT-NMOS4020 (for 22A at 25C) can be used.
Prometheus-II is intended for high-voltage, high-power devices in DC or AC motor drives, Switched Mode Power Supplies (SMPS) and any other power-conversion application within high-temperature environment or whenever system designers want to skip cooling.
Aeronautics (fly-by-wire), train, automotive (electric and hybrid vehicle), industrial, and oil and gas are among the target markets.
The application note for Prometheus-II is available on request and includes detailed instructions to build a Power Transistors Driver, a reference design with its bill of material and schematic, as well as detailed, implementation for each chip of the BOM.
Depending on customer needs, Prometheus-II can be implemented with packaged components on a high-temperature printed circuit board, or within a multi-chip module on the basis of bare dice.
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